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Part Number Overview
Manufacturer Part Number
RN1444ATE85LF
Description
TRANS PREBIAS NPN 20V 0.3A SMINI
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20 V 300 mA 30 MHz 200 mW Surface Mount S-Mini
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
300 mA
Voltage - Collector Emitter Breakdown (Max)
20 V
Resistor - Base (R1)
2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 4mA, 2V
Vce Saturation (Max) @ Ib, Ic
100mV @ 3mA, 30mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
30 MHz
Power - Max
200 mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
S-Mini
Base Product Number
RN1444
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
RN1444-A(TE85L,F)
RN1444ATE85LFDKR
RN1444ATE85LFCT
RN1444ATE85LFTR
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN1444ATE85LF
Documents & Media
Datasheets
1(RN1441-1444)
Quantity Price
-
Substitutes
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