China
Spain
Rusia
Italy
GermanyIPB052N04NG
Part Number Overview
Manufacturer Part Number
IPB052N04NG
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 40 V 70A (Tc) 79W (Tc) Surface Mount PG-TO-263-3-2
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
693
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™ 3
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.2mOhm @ 70A, 10V
Vgs(th) (Max) @ Id
4V @ 33µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3300 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
79W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO-263-3-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IPB052N04NG
IFEINFIPB052N04NG
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB052N04NG
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 693
Unit Price: $0.43
Packaging: Bulk
MinMultiplier: 693
Packaging: Bulk
MinMultiplier: 693
Substitutes
-