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Part Number Overview
Manufacturer Part Number
FDG311N
Description
MOSFET N-CH 20V 1.9A SC88
Detailed Description
N-Channel 20 V 1.9A (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
1,466
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
115mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.5 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
750mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-88 (SC-70-6)
Package / Case
6-TSSOP, SC-88, SOT-363
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-FDG311N
FAIFSCFDG311N
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDG311N
Documents & Media
Datasheets
1(FDG311N Datasheet)
Quantity Price
Quantity: 1466
Unit Price: $0.2
Packaging: Bulk
MinMultiplier: 1466
Packaging: Bulk
MinMultiplier: 1466
Substitutes
-