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Part Number Overview
Manufacturer Part Number
IRF6892STR1PBF
Description
MOSFET N-CH 25V 28A DIRECTFET
Detailed Description
N-Channel 25 V 28A (Ta), 125A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ S3C
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
28A (Ta), 125A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 28A, 10V
Vgs(th) (Max) @ Id
2.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
2510 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ S3C
Package / Case
DirectFET™ Isometric S3C
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRF6892STR1PBFDKR
SP001526954
IRF6892STR1PBFCT
IRF6892STR1PBFTR
IRF6892STR1PBF-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6892STR1PBF
Documents & Media
Datasheets
1(IRF6892STR (1) PBF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
()
Featured Product
1(Data Processing Systems)
PCN Obsolescence/ EOL
1(Multiple Devices 20/Dec/2013)
HTML Datasheet
1(IRF6892STR (1) PBF)
Quantity Price
-
Substitutes
-