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Part Number Overview
Manufacturer Part Number
IRF6613TR1
Description
MOSFET N-CH 40V 23A DIRECTFET
Detailed Description
N-Channel 40 V 23A (Ta), 150A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
23A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.4mOhm @ 23A, 10V
Vgs(th) (Max) @ Id
2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5950 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MT
Package / Case
DirectFET™ Isometric MT
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001528856
IRF6613
IRF6613TR1TR
IRF6613TR1INACTIVE
IRF6613-ND
*IRF6613TR1
IRF6613TR1-ND
IRF6613TR1CT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6613TR1
Documents & Media
Datasheets
1(IRF6613)
Other Related Documents
()
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRF6613)
Product Drawings
1(IR Hexfet Circuit)
Quantity Price
-
Substitutes
Part No. : IRF6613TRPBF
Manufacturer. : Infineon Technologies
Quantity Available. : 4,078
Unit Price. : $2.40000
Substitute Type. : Parametric Equivalent
Quantity Available. : 4,078
Unit Price. : $2.40000
Substitute Type. : Parametric Equivalent