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Part Number Overview
Manufacturer Part Number
STE110NS20FD
Description
MOSFET N-CH 200V 110A ISOTOP
Detailed Description
N-Channel 200 V 110A (Tc) 500W (Tc) Chassis Mount ISOTOP®
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
Standard Package
10
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
MESH OVERLAY™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
24mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
504 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
500W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
ISOTOP®
Package / Case
ISOTOP
Base Product Number
STE1
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
497-2657-5-NDR
497-2657-5
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STE110NS20FD
Documents & Media
Datasheets
1(STE110NS20FD)
HTML Datasheet
1(STE110NS20FD)
Quantity Price
-
Substitutes
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