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Part Number Overview
Manufacturer Part Number
FQU5P20TU
Description
MOSFET P-CH 200V 3.7A IPAK
Detailed Description
P-Channel 200 V 3.7A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
70
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 1.85A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
430 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 45W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
FQU5P20
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FQU5P20TUOS
FQU5P20TU-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQU5P20TU
Documents & Media
Datasheets
1(FQD5P20)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Parts obs 30/Jun/2022)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Mult Dev Assembly Chg 20/Dec/2019)
PCN Packaging
1(Mult Devices 24/Oct/2017)
Quantity Price
-
Substitutes
-