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Part Number Overview
Manufacturer Part Number
APT34N80B2C3G
Description
MOSFET N-CH 800V 34A T-MAX
Detailed Description
N-Channel 800 V 34A (Tc) 417W (Tc) Through Hole T-MAX™ [B2]
Manufacturer
Microchip Technology
Standard LeadTime
38 Weeks
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
Microchip Technology
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
145mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
355 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4510 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
417W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
T-MAX™ [B2]
Package / Case
TO-247-3 Variant
Base Product Number
APT34N80
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
APT34N80B2C3GMI
APT34N80B2C3GMI-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microchip Technology APT34N80B2C3G
Documents & Media
Datasheets
()
Environmental Information
()
HTML Datasheet
()
Product Drawings
1(T-MAX Front)
Quantity Price
Quantity: 100
Unit Price: $8.75
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $10.76
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Substitutes
-