China
Spain
Rusia
Italy
Germany2SK2845(TE16L1,Q)
Part Number Overview
Manufacturer Part Number
2SK2845(TE16L1,Q)
Description
MOSFET N-CH 900V 1A DP
Detailed Description
N-Channel 900 V 1A (Ta) 40W (Tc) Surface Mount PW-MOLD
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PW-MOLD
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
2SK2845
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage 2SK2845(TE16L1,Q)
Documents & Media
Datasheets
()
HTML Datasheet
()
Quantity Price
-
Substitutes
Part No. : IXTY1N100P
Manufacturer. : IXYS
Quantity Available. : 0
Unit Price. : $1.71423
Substitute Type. : Similar
Quantity Available. : 0
Unit Price. : $1.71423
Substitute Type. : Similar