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Part Number Overview
Manufacturer Part Number
2SC6017-H-TL-E
Description
NPN EPITAXIAL PLANAR SILICON
Detailed Description
Bipolar (BJT) Transistor NPN 50 V 10 A 200MHz 950 mW Surface Mount DPAK/TP-FA
Manufacturer
Sanyo
Standard LeadTime
Edacad Model
Standard Package
1,314
Supplier Stocks
Technical specifications
Mfr
Sanyo
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
360mV @ 250mA, 5A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A, 2V
Power - Max
950 mW
Frequency - Transition
200MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package
DPAK/TP-FA
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
ONSSNY2SC6017-H-TL-E
2156-2SC6017-H-TL-E
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Sanyo 2SC6017-H-TL-E
Documents & Media
Datasheets
1(2SA2169-E Datasheet)
Quantity Price
Quantity: 1314
Unit Price: $0.27
Packaging: Bulk
MinMultiplier: 1314
Packaging: Bulk
MinMultiplier: 1314
Substitutes
-