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Part Number Overview
Manufacturer Part Number
SPP02N60C3XKSA1
Description
LOW POWER_LEGACY
Detailed Description
N-Channel 600 V 1.8A (Tc) 25W (Tc) Through Hole PG-TO220-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs
12.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Base Product Number
SPP02N
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
INFINFSPP02N60C3XKSA1
SP000681014
2156-SPP02N60C3XKSA1-IT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPP02N60C3XKSA1
Documents & Media
Datasheets
1(SPP02N60C3)
Other Related Documents
1(Part Number Guide)
HTML Datasheet
1(SPP02N60C3)
Simulation Models
1(CoolMOS™ PowerMOSFET 600V C3 Spice Model)
Quantity Price
-
Substitutes
Part No. : IPP60R600P7XKSA1
Manufacturer. : Infineon Technologies
Quantity Available. : 0
Unit Price. : $1.61000
Substitute Type. : Direct
Quantity Available. : 0
Unit Price. : $1.61000
Substitute Type. : Direct