China
Spain
Rusia
Italy
GermanyAPT44F80B2
Part Number Overview
Manufacturer Part Number
APT44F80B2
Description
MOSFET N-CH 800V 47A T-MAX
Detailed Description
N-Channel 800 V 47A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2]
Manufacturer
Microchip Technology
Standard LeadTime
49 Weeks
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Microchip Technology
Series
POWER MOS 8™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
210mOhm @ 24A, 10V
Vgs(th) (Max) @ Id
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
305 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
9330 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1135W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
T-MAX™ [B2]
Package / Case
TO-247-3 Variant
Base Product Number
APT44F80
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microchip Technology APT44F80B2
Documents & Media
Datasheets
()
Environmental Information
()
PCN Assembly/Origin
1(Fab Site 27/Jul/2022)
HTML Datasheet
()
Quantity Price
Quantity: 30
Unit Price: $22.59
Packaging: Tube
MinMultiplier: 30
Packaging: Tube
MinMultiplier: 30
Substitutes
-