China
Spain
Rusia
Italy
GermanySIHU7N60E-E3
Part Number Overview
Manufacturer Part Number
SIHU7N60E-E3
Description
MOSFET N-CH 600V 7A TO251
Detailed Description
N-Channel 600 V 7A (Tc) 78W (Tc) Through Hole TO-251AA
Manufacturer
Vishay Siliconix
Standard LeadTime
21 Weeks
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251AA
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
SIHU7
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHU7N60E-E3
Documents & Media
Datasheets
1(SiHU7N60E)
PCN Assembly/Origin
1(SIL-079-2014-Rev-0 26/Sep/2014)
HTML Datasheet
1(SiHU7N60E)
Quantity Price
Quantity: 3000
Unit Price: $0.89464
Packaging: Tube
MinMultiplier: 3000
Packaging: Tube
MinMultiplier: 3000
Substitutes
-