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Part Number Overview
Manufacturer Part Number
RN49A1FE(TE85L,F)
Description
PNP + NPN BRT Q1BSR=2.2KOHM Q1BE
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz, 250MHz 100mW Surface Mount ES6
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
4,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
2.2kOhms, 22kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
200MHz, 250MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Base Product Number
RN49A1
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
264-RN49A1FE(TE85LF)TR
264-RN49A1FE(TE85LF)CT
264-RN49A1FE(TE85LF)DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/Toshiba Semiconductor and Storage RN49A1FE(TE85L,F)
Documents & Media
PCN Obsolescence/ EOL
1(Mult Dev EOL Rev Apr/2021)
Quantity Price
-
Substitutes
Part No. : PEMD10,115
Manufacturer. : Nexperia USA Inc.
Quantity Available. : 3,885
Unit Price. : $0.46000
Substitute Type. : Similar
Quantity Available. : 3,885
Unit Price. : $0.46000
Substitute Type. : Similar