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Part Number Overview
Manufacturer Part Number
HUF76139S3
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 30 V 75A (Tc) 200W (Tc) Through Hole I2PAK (TO-262)
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
247
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK (TO-262)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-HUF76139S3
HARHARHUF76139S3
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation HUF76139S3
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 247
Unit Price: $1.22
Packaging: Bulk
MinMultiplier: 247
Packaging: Bulk
MinMultiplier: 247
Substitutes
-