China
Spain
Rusia
Italy
GermanyAPT47N65BC3G
Part Number Overview
Manufacturer Part Number
APT47N65BC3G
Description
MOSFET N-CH 650V 47A TO247
Detailed Description
N-Channel 650 V 47A (Tc) 417W (Tc) Through Hole TO-247 [B]
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
CoolMOS™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs
260 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7015 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
417W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 [B]
Package / Case
TO-247-3
Base Product Number
APT47N65
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
APT47N65BC3G-ND
150-APT47N65BC3G
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APT47N65BC3G
Documents & Media
Datasheets
1(APT47N65SB,SC3 Datasheet)
Environmental Information
()
HTML Datasheet
1(APT47N65SB,SC3 Datasheet)
Quantity Price
-
Substitutes
-