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Part Number Overview
Manufacturer Part Number
SUD35N10-26P-E3
Description
MOSFET N-CH 100V 35A TO252
Detailed Description
N-Channel 100 V 35A (Tc) 8.3W (Ta), 83W (Tc) Surface Mount TO-252AA
Manufacturer
Vishay Siliconix
Standard LeadTime
11 Weeks
Edacad Model
Standard Package
2,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7V, 10V
Rds On (Max) @ Id, Vgs
26mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
8.3W (Ta), 83W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
SUD35
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SUD35N10-26P-E3DKR
SUD35N10-26P-E3CT
SUD35N10-26P-E3TR
SUD35N10-26P-E3-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SUD35N10-26P-E3
Documents & Media
Datasheets
1(SUD35N10-26P)
PCN Assembly/Origin
1(Assembly Site Add 9/Jun/2016)
HTML Datasheet
1(SUD35N10-26P)
Quantity Price
Quantity: 10000
Unit Price: $0.8775
Packaging: Tape & Reel (TR)
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Packaging: Digi-Reel®
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Packaging: Digi-Reel®
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