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Part Number Overview
Manufacturer Part Number
FQI2N30TU
Description
MOSFET N-CH 300V 2.1A I2PAK
Detailed Description
N-Channel 300 V 2.1A (Tc) 3.13W (Ta), 40W (Tc) Through Hole TO-262 (I2PAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
683
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
300 V
Current - Continuous Drain (Id) @ 25°C
2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.7Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
130 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 40W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-FQI2N30TU-FS
FAIFSCFQI2N30TU
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQI2N30TU
Documents & Media
Datasheets
1(FQI2N30TU)
Quantity Price
Quantity: 683
Unit Price: $0.44
Packaging: Tube
MinMultiplier: 683
Packaging: Tube
MinMultiplier: 683
Substitutes
-