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Part Number Overview
Manufacturer Part Number
SCT2080KEC
Description
SICFET N-CH 1200V 40A TO247
Detailed Description
N-Channel 1200 V 40A (Tc) 262W (Tc) Through Hole TO-247
Manufacturer
Rohm Semiconductor
Standard LeadTime
Edacad Model
SCT2080KEC Models
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
Rohm Semiconductor
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
117mOhm @ 10A, 18V
Vgs(th) (Max) @ Id
4V @ 4.4mA
Gate Charge (Qg) (Max) @ Vgs
106 nC @ 18 V
Vgs (Max)
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
2080 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
262W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Base Product Number
SCT2080
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor SCT2080KEC
Documents & Media
Datasheets
()
Other Related Documents
()
Product Training Modules
1(SiC Trench MOSFETs)
Video File
1(ROHM 4-pin SiC Power MOSFETs | allaboutcomponents.com Daily)
Environmental Information
()
Featured Product
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 15/Oct/2021)
HTML Datasheet
()
EDA Models
1(SCT2080KEC Models)
Simulation Models
1(SCT2080KE Spice Model)
Reliability Documents
1(MOS-2GTHD Reliability Test)
Quantity Price
-
Substitutes
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